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8W GaN Power Transistor


  • Description

    The BeRex BCG008 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 1250 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz.

    The product may be used in either wide-band or narrow-band applications.

    The BCG008 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.

  • Applications
    • Commercial
    • Military / Hi-Rel.
    • Test & Measurement
  • Device Features
    • 39.0 dBm Typical Saturated Output Power (P3dB) @ 12 GHz
    • 9.5 dB Typical Saturated gain (G3dB) @ 12 GHz
    • 72 % PAE Typical @ 12 GHz
    • 0.15 X 1250 Micron Recessed Gate
Title Model No. Datasheets
50 ohm, Board Mounted